Chinese scientists have made a major breakthrough in photolithography by developing a homegrown laser-produced plasma (LPP) EUV light source—a key component in advanced microchip manufacturing. The project, led by Lin Nan at the Shanghai Institute of Optics and Fine Mechanics, is especially significant in light of the export restrictions on ASML equipment to China since 2019. The new source is more compact and performs on par with international counterparts, marking a critical step toward China’s ability to build its own lithography systems.
Unlike traditional ASML setups, which rely on bulky and expensive CO₂ gas lasers, the Chinese team used a solid-state laser. These lasers are smaller, more energy-efficient (with an efficiency of around 20%), and more suitable for large-scale implementation. Their system achieved a conversion efficiency of 3.42%, surpassing results from European research institutions and trailing only two teams globally—one in the U.S. and one in Japan.
Researchers estimate that the theoretical maximum efficiency is around 6%, and further experiments are already planned to reach that goal. This advancement could lay the foundation for an independent, cutting-edge chip manufacturing ecosystem in China.
In parallel, Russia’s Zelenograd Nanotechnology Center (ZNTC), in collaboration with Belarus-based Planar, has developed a photolithography system with a 350 nm resolution. It also replaced traditional mercury lamps with solid-state lasers, reflecting a global shift toward more compact and energy-efficient light sources in lithography.
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